Recent Results in the Theoretical Description of Cl and Ebic Defect Contrasts
نویسندگان
چکیده
The theoretical description used for the analysis of beam-voltage dependent CL and ERIC contrasts from a surface-parallel dislocation is summarized. The importance of the use of a realistic carrier generation model is discussed and suitable methods of the evaluation of defect parameters (depth position, dcfect strength) are proposed.
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